Study of the effect of nano-sized precipitates on the mechanical properties of boron-added low-carbon steels by neutron scattering techniques

The effect of nano-sized precipitates on the mechanical properties of boron-added low-carbon steels was studied by neutron scattering techniques such as powder diffraction, small-angle scattering and particle tracking autography

Porous silicon nanoneedles modulate endocytosis to deliver biological payloads

Owing to their ability to efficiently deliver biological cargo and sense the intracellular milieu, vertical arrays of high aspect ratio nanostructures, known as nanoneedles, are being developed as minimally invasive tools for cell manipulation. However, little is known of the mechanisms of cargo transfer across the cell membrane‐nanoneedle interface. In particular, the contributions of membrane piercing, modulation of membrane permeability and endocytosis to cargo transfer remain largely unexplored. Here, combining state‐of‐the‐art electron and scanning ion conductance microscopy with molecular biology techniques, it is shown that porous silicon nanoneedle arrays concurrently stimulate independent endocytic pathways which contribute to enhanced biomolecule delivery into human mesenchymal stem cells. Electron microscopy of the cell membrane at nanoneedle sites shows an intact lipid bilayer, accompanied by an accumulation of clathrin‐coated pits and caveolae. Nanoneedles enhance the internalization of biomolecular markers of endocytosis, highlighting the concurrent activation of caveolae‐ and clathrin‐mediated endocytosis, alongside macropinocytosis. These events contribute to the nanoneedle‐mediated delivery (nanoinjection) of nucleic acids into human stem cells, which distribute across the cytosol and the endolysosomal system. This data extends the understanding of how nanoneedles modulate biological processes to mediate interaction with the intracellular space, providing indications for the rational design of improved cell‐manipulation technologies

Exploiting Inter- and Intra-Memory Asymmetries for Data Mapping in Hybrid Tiered-Memories

Modern computing systems are embracing hybrid memory comprising of DRAM and non-volatile memory (NVM) to combine the best properties of both memory technologies, achieving low latency, high reliability, and high density. A prominent characteristic of DRAM-NVM hybrid memory is that it has NVM access latency much higher than DRAM access latency. We call this inter-memory asymmetry. We observe that parasitic components on a long bitline are a major source of high latency in both DRAM and NVM, and a significant factor contributing to high-voltage operations in NVM, which impact their reliability. We propose an architectural change, where each long bitline in DRAM and NVM is split into two segments by an isolation transistor. One segment can be accessed with lower latency and operating voltage than the other. By introducing tiers, we enable non-uniform accesses within each memory type (which we call intra-memory asymmetry), leading to performance and reliability trade-offs in DRAM-NVM hybrid memory. We extend existing NVM-DRAM OS in three ways. First, we exploit both inter- and intra-memory asymmetries to allocate and migrate memory pages between the tiers in DRAM and NVM. Second, we improve the OS's page allocation decisions by predicting the access intensity of a newly-referenced memory page in a program and placing it to a matching tier during its initial allocation. This minimizes page migrations during program execution, lowering the performance overhead. Third, we propose a solution to migrate pages between the tiers of the same memory without transferring data over the memory channel, minimizing channel occupancy and improving performance. Our overall approach, which we call MNEME, to enable and exploit asymmetries in DRAM-NVM hybrid tiered memory improves both performance and reliability for both single-core and multi-programmed workloads.Comment: 15 pages, 29 figures, accepted at ACM SIGPLAN International Symposium on Memory Managemen

Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors

We present a numerical model study of the zero-temperature infrared optical properties of (III,Mn)V diluted magnetic semiconductors. Our calculations demonstrate the importance of treating disorder and interaction effects simultaneously in modelling these materials. We find that the conductivity has no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and that oscillator weight is shifted to higher frequencies by stronger disorder. These results are in good qualitative agreement with recent thin film absorption measurements. We use our numerical findings to discuss the use of f-sum rules evaluated by integrating optical absorption data for accurate carrier-density estimates.Comment: 7 pages, 3 figure